AlN/AlGaInN superlattice light-emitting diodes at 280 nm

Ultraviolet light-emitting diodes operating at 280 nm, grown by gas source molecular-beam epitaxy with ammonia, are described. The device is composed of n- and p-type superlattices of AlN(1.2 nm thick)/AlGaInN(0.5 nm thick) doped with Si and Mg, respectively. With these superlattices, and despite the high average Al content, we obtain hole concentrations of (0.7-1.1) x 10(18) cm(-3), with the mobility of 3-4 cm(2)/V s and electron concentrations of 3 x 10(19) cm(-3), with the mobility of 10-20 cm(2)/V s, at room temperature. These carrier concentrations are sufficient to form effective p-n junctions needed in UV light sources. (C) 2003 American Institute of Physics.