The luminescence of C-N thin films formed by nitrogen ion implantation on a diamond film

被引：2

作者：

Cheng, GA ^{[1
]}

Xu, F ^{[1
]}

You, QY ^{[1
]}

Ye, DR ^{[1
]}

机构：

[1] Nanchang Univ, Dept Mat Sci & Engn, Nanchang 330047, Peoples R China

来源：

SURFACE & COATINGS TECHNOLOGY | 2000年 / 128卷

基金：

美国国家科学基金会;

关键词：

beta-C3N4; thin film; ion implantation; photoluminescence;

D O I：

10.1016/S0257-8972(00)00597-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this presentation, C-N thin films synthesized by nitrogen-ion implantation on a diamond film are investigated. The structures of the implanted film and unimplanted films were determined by the use of an X-ray diffractometer (XRD) and scanning electron microscopy (SEM). It was found that a beta-C3N4 compound thin film was formed in the implanted layer. By means of the spectrophotometer, it indicates that the intensive blue-violet luminescence, excited at 249 nm, is obtained at room temperature, and the up-conversion luminescence in the blue-violet area, excited at 631 nm, is also observed. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：320 / 323

页数：4

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