Optical, structural and electrical properties of tin doped indium oxide thin films prepared by spray-pyrolysis technique

被引:62
作者
Ramaiah, KS
Raja, VS
Bhatnagar, AK
Tomlinson, RD
Pilkington, RD
Hill, AE
Chang, SJ
Su, YK
Juang, FS
机构
[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan
[2] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India
[3] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
[4] Univ Salford, Dept Elect & Elect Engn, Salford M5 4WT, Lancs, England
[5] Univ Salford, Dept Phys, Salford M5 4WT, Lancs, England
[6] Natl Huwei Inst Technol, Dept Electropt Engn, Yunlin 63208, Taiwan
关键词
D O I
10.1088/0268-1242/15/7/305
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Tin doped indium oxide (In2O3:Sn) or indium tin oxide (ITO) thin films have been successfully deposited by the low cost spray-pyrolysis method. Low sheet resistance and high mobility films were obtained when the films were deposited at the substrate temperature of 793 K. The direct optical bandgaps for the films deposited at 793 (a) and 753 K (b) were found to be 3.46 and 3.40 eV, respectively. Similarly, the indirect bandgaps for a- and b-type films were found to be 3.0 and 2.75 eV, respectively. The Burstein-Moss shift was observed in the films. The refractive index (n) and extinction coefficient (k) were found to be in the range of 2.1 to 1.1 and 0.6 to 0.01, respectively. The various scattering mechanisms such as lattice, ionized impurity, neutral impurity, grain boundary and alloy scattering due to variation of theoretical mobilities with temperature are discussed, in order to compare experimental results. In the lattice scattering mechanism, the quantum size effect phenomena were employed to estimate the energy dilation (E-I). The a-type films exhibited SnO2 as secondary phase whereas b-type films showed single phase In2O3:Sn with high sheet resistance. The lattice constants were found to be 10.16 and 10.09 A for a- and b-type films, respectively.
引用
收藏
页码:676 / 683
页数:8
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