Spin electronics - a review

被引：203

作者：

Gregg, JF ^{[1
]}

Petej, I ^{[1
]}

Jouguelet, E ^{[1
]}

Dennis, C ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Spin Elect Grp, Oxford OX1 3PU, England

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2002年 / 35卷 / 18期

关键词：

D O I：

10.1088/0022-3727/35/18/201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An overview is given of the state of the art in spin electronics. The technical basis is reviewed and simple ideas of giant magnetoresistance discussed. The connection between spin electronics and mesomagnetism is explored. Three-terminal spin-electronic devices are introduced of various types including hot carrier and hybrid spin/semiconductor devices. Spin-tunnel devices are examined and single spin electronics is also treated. The paper concludes with an outlook on future prospects in this field.

引用

页码：R121 / R155

页数：35

共 141 条

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