A NEW CONCEPT FOR THE DESIGN AND REALIZATION OF METAL-BASED SINGLE-ELECTRON DEVICES - STEP-EDGE CUTOFF

被引:23
作者
ALTMEYER, S
SPANGENBERG, B
KURZ, H
机构
关键词
D O I
10.1063/1.115172
中图分类号
O59 [应用物理学];
学科分类号
摘要
To increase the operating temperature of a single electron circuit, it is necessary to reduce the capacitance of the tunnel junction. Usually this is done by reducing the linewidth of the capacitor forming metal stripes, which are sandwiched with an intermediate insulator. The use of alternative materials, however, allows capacitance reduction by means of thicker isolation layers or by a capacitor geometry different from a sandwich. The new SECO (step edge cut off) method, for the fabrication of single electron devices will be presented. (C) 1995 American Institute of Physics.
引用
收藏
页码:569 / 571
页数:3
相关论文
共 17 条
  • [1] AVENIN DV, 1991, MESOSCOPIC PHENOMENA, P173
  • [2] Burstein E., 1969, TUNNELING PHENOMENA
  • [3] OFFSET MASKS FOR LIFT-OFF PHOTOPROCESSING
    DOLAN, GJ
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 337 - 339
  • [4] A NEW LEAD ALLOY FOR JOSEPHSON-JUNCTIONS
    FU, CY
    VANDUZER, T
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1981, 17 (01) : 290 - 294
  • [5] GOETZ M, 1994, J PHYSIQUE, V6, P223
  • [6] SINGLE CHARGE TUNNELING - A BRIEF INTRODUCTION
    GRABERT, H
    [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1991, 85 (03): : 319 - 325
  • [7] GRABERT H, 1994, PHYS BL, V50, P229
  • [8] KAO KC, 1981, ELECTRICAL TRANSPORT
  • [9] KOCH H, 1987, UNPUB INT SUPERCONDU, P281
  • [10] KUZMIN, COMMUNICATION