Fracture toughness of polysilicon MEMS devices

被引:127
作者
Kahn, H
Tayebi, N
Ballarini, R
Mullen, RL
Heuer, AH
机构
[1] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA
[2] Case Western Reserve Univ, Dept Mech & Aerosp Engn, Cleveland, OH 44106 USA
[3] Case Western Reserve Univ, Dept Civil Engn, Cleveland, OH 44106 USA
基金
美国国家科学基金会;
关键词
microelectromechanical systems; polysilicon; fracture toughness; surface micromachining;
D O I
10.1016/S0924-4247(99)00366-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Polysilicon fracture mechanics specimens have been fabricated using standard microelectro-mechanical systems (MEMS) processing techniques, with characteristic dimensions comparable to typical MEMS devices. These specimens are fully integrated with simultaneously fabricated electrostatic actuators that are capable of providing sufficient force to ensure catastrophic crack propagation. Thus, the entire fracture experiment takes place on-chip, eliminating the difficulties associated with attaching the specimen to an external loading source. The specimens incorporate atomically sharp cracks created by indentation, and fracture is initiated using monotonic electrostatic loading. The fracture toughness values are determined using finite element analysis (FEA) of the experimental data, and show a median value of 1.1 MPa m(1/2). (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:274 / 280
页数:7
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