The fracture toughness of polysilicon microdevices: A first report

被引:95
作者
Ballarini, R [1 ]
Mullen, RL [1 ]
Yin, Y [1 ]
Kahn, H [1 ]
Stemmer, S [1 ]
Heuer, AH [1 ]
机构
[1] CASE WESTERN RESERVE UNIV,DEPT MAT SCI & ENGN,CLEVELAND,OH 44106
基金
美国国家科学基金会;
关键词
D O I
10.1557/JMR.1997.0131
中图分类号
T [工业技术];
学科分类号
08 [工学];
摘要
Polysilicon microfracture specimens were fabricated using surface micromachining techniques identical to those used to fabricate microelectromechanical systems (MEMS) devices. The nominal critical J-integral (the critical energy release rate) for crack initiation, J(c), was determined in specimens whose characteristic dimensions were of the same order of magnitude as the grain size of the polysilicon. J(c) values ranged from 16 to 62 N/m, approximately a factor of four larger than J(c) values reported for single crystal silicon.
引用
收藏
页码:915 / 922
页数:8
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