On the capacitance of metal/high-k dielectric material stack/silicon structures

被引：15

作者：

Jiang, J

Awadelkarim, OO

Lee, DO

Roman, P

Ruzyllo, J

机构：

[1] Penn State Univ, Dept Engn Sci & Mech, Elect Mat & Proc Res Lab, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 11期

关键词：

D O I：

10.1016/S0038-1101(02)00167-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The accumulation capacitance of metal insulator-Si capacitors with SrTa2O6, ZrSiO4-based high-k gate dielectrics is observed to have significantly different dependence on the temperature and the frequency of a capacitance-voltage measurement than that of the conventional metal-oxide-Si capacitors. It is shown that this is due to contributions from the, often, inadvertently grown, and relatively poorer quality interfacial dielectric between the high-k material stack and the Si substrate. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1991 / 1995

页数：5

共 12 条

[1] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures [J].