共 10 条
[3]
Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
[J].
39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001,
2001,
:360-366
[4]
HIPPEL ARV, 1937, J APPL PHYS, V8, P815
[6]
Moore G. E., 1965, ELECTRONICS, V38, P114, DOI DOI 10.1109/N-SSC.2006.4785860
[7]
OGAWA T, 1982, HDB ATMOSPHERICS, V1, P23
[9]
Percolation models for gate oxide breakdown
[J].
JOURNAL OF APPLIED PHYSICS,
1999, 86 (10)
:5757-5766
[10]
1999, SEMICONDUCTOR IND AS