Thindielectric films - Uncorrelated breakdown of integrated circuits

被引:59
作者
Alam, MA [1 ]
Smith, RK [1 ]
Weir, BE [1 ]
Silverman, PJ [1 ]
机构
[1] Agere Syst, Murray Hill, NJ 07076 USA
关键词
D O I
10.1038/420378a
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
[No abstract available]
引用
收藏
页码:378 / 378
页数:1
相关论文
共 10 条
[1]   A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling [J].
Alam, MA ;
Weir, BE ;
Silverman, PJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (02) :239-246
[2]   SUSCEPTIBILITY SCALING FUNCTIONS FOR FERROMAGNETIC ISING FILMS [J].
CAPEHART, TW ;
FISHER, ME .
PHYSICAL REVIEW B, 1976, 13 (11) :5021-5038
[3]   Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications [J].
Degraeve, R ;
Kaczer, B ;
De Keersgieter, A ;
Groeseneken, G .
39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001, 2001, :360-366
[4]  
HIPPEL ARV, 1937, J APPL PHYS, V8, P815
[5]   Alternative dielectrics to silicon dioxide for memory and logic devices [J].
Kingon, AI ;
Maria, JP ;
Streiffer, SK .
NATURE, 2000, 406 (6799) :1032-1038
[6]  
Moore G. E., 1965, ELECTRONICS, V38, P114, DOI DOI 10.1109/N-SSC.2006.4785860
[7]  
OGAWA T, 1982, HDB ATMOSPHERICS, V1, P23
[8]   Perspectives: Device physics - Pushing the limits [J].
Packan, PA .
SCIENCE, 1999, 285 (5436) :2079-+
[9]   Percolation models for gate oxide breakdown [J].
Stathis, JH .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5757-5766
[10]  
1999, SEMICONDUCTOR IND AS