Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications

被引：122

作者：

Degraeve, R ^{[1
]}

Kaczer, B ^{[1
]}

De Keersgieter, A ^{[1
]}

Groeseneken, G ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

39TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM 2001 | 2001年

关键词：

soft breakdown; hard breakdown; oxide reliability;

D O I：

10.1109/RELPHY.2001.922928

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method to determine the breakdown position in short channel nmosfets is introduced. We find that soft breakdown occurs exclusively in the transistor channel while the hardest circuit killing breakdowns occur above the source and drain extension regions. Since these breakdowns make up only a small fraction of all breakdowns, a relaxation of the reliability specification is possible.

引用

页码：360 / 366

页数：7

共 16 条

[1]

ALAM M, 2000, P INT REL PHYS S, P21

[2] The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown [J].

Alam, MA ;

Weir, BE ;

Silverman, PJ ;

Ma, Y ;

Hwang, D .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :529-532

[3]

ALAMMA, 1999, IEDM, P449

[4] A unified gate oxide reliability model [J].

Hu, CM ;

Lu, Q .

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, :47-51

[5] Impact of MOSFET oxide breakdown on digital circuit operation and reliability [J].

Kaczer, B ;

Degraeve, R ;

Groeseneken, G ;

Rasras, M ;

Kubicek, S ;

Vandamme, E ;

Badenes, G .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :553-556

[6]

KACZER B, 2001, UNPUB VLSI TECHN S

[7]

KACZER B, UNPUB INFOS 2001

[8]

Kubicek S., 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P823, DOI 10.1109/IEDM.1999.824276

[9]

OKADA K, 1999, VLSI, P57

[10] Influence of soft breakdown on NMOSFET device characteristics [J].

Pompl, T ;

Wurzer, H ;

Kerber, M ;

Wilkins, RCW ;

Eisele, I .

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL, 1999, :82-87

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