Recent advances in Sb-based midwave-infrared lasers

被引：69

作者：

Hasenberg, TC

Miles, RH

Kost, AR

West, L

机构：

[1] Hughes Research Laboratories, Malibu

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 08期

关键词：

D O I：

10.1109/3.605563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several midwave-infrared (MWIR) lasers have been demonstrated, including 2.8-, 3.1-, 3.2-, 3.4-, 4.1-, and 4.3-mu m diodes, The devices utilize multiple-quantum-well (MQW) active regions in which the quantum wells (QW's) consist of InAs-GaInSb broken-gap superlattices (BGSL's), InGaAsSb barrier layers separate the BGSL wells, and InAs-AlSb superlattices are employed as cladding layers, We have observed pulsed laser operation up to 255 K with 3.2-mu m devices. Typical pulsed output powers for these devices at 200 K are over 50 mW.

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页码：1403 / 1406

页数：4

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