InP-GaP bi-coaxial nanowires and amorphous GaP nanotubes

被引：13

作者：

Shen, Guozhen ^{[1
]}

Bando, Yoshio ^{[1
]}

Golberg, Dmitri ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Nanoscale Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2007年 / 111卷 / 09期

关键词：

D O I：

10.1021/jp067691r

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

InP-GaP bi-coaxial nanowires have been synthesized by a simple one-step thermal evaporation of InP and Ga powders. The products were investigated using scanning electron microscopy, transmission electron microscopy, and high-resolution transmission electron microscopy equipped with an X-ray energy dispersive spectrometer. Studies indicate that, within a single bi-coaxial nanowire, the InP subnanowire is single crystal with the preferred (111) direction and the GaP subnanowire is amorphous. Besides the InP-GaP bi-coaxial nanowires, some amorphous GaP nanotubes partially filled with In were also obtained. Possible growth mechanism was also proposed based on a series of experimental results and a vapor-liquid-solid mechanism was proposed for the nanostructures formation. Photoluminescence properties of the product were also studied.

引用

页码：3665 / 3668

页数：4

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