Density estimation for amorphous carbon nanopillars grown by focused ion beam assisted chemical vapor deposition

被引:44
作者
Ishida, M [1 ]
Fujita, J [1 ]
Ochiai, Y [1 ]
机构
[1] NEC Corp Ltd, Fundamental Res Labs, Tsukuba, Ibaraki 3058501, Japan
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 06期
关键词
D O I
10.1116/1.1526699
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The mechanical resonant frequency and spring constant of amorphous carbon nanopillars grown by focused ion beam assisted chemical vapor deposition (FIB CVD) were measured to evaluate the pillar density. The measured density ranged from 2.5 to 4.2 X-3 kg/m(3), depending on the growth conditions. Annealing the pillars at 600 degreesC completely removed the Ga incorporated in the pillar during FIB CVD. The pillar density after annealing decreased to about 1.9 X 10(3) kg/m(3), which indicated the density excess was mainly due to the implantation of Ga. At lower growth rates, a sharp decrease in the Ga content suggested higher sputtering rate of Ga through ion beam irradiation. (C) 2002 American Vacuum Society.
引用
收藏
页码:2784 / 2787
页数:4
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