Chemisorption of Ba on deuterium-terminated Si(100) surface

被引：6

作者：

Ojima, K

Hongo, S

Shao, ZX

Urano, T

机构：

[1] Faculty of Engineering, Kobe University, Rokko, Nada, Kobe

来源：

APPLIED SURFACE SCIENCE | 1997年 / 117卷

关键词：

barium; deuterium; Si(100); MDS; TDS;

D O I：

10.1016/S0169-4332(97)80056-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The system of Ba overlayers deposited on a deuterium-terminated Si(100) surface was investigated by means of MDS (metastable de-excitation spectroscopy) and TDS (thermal desorption spectroscopy). Deposition of Ba overlayers caused the reduction of Si-D bond strength because of charge donation to Si substrate from Ba atoms. The other half reacted with adsorbed Ba atoms entirely to form Ba-D bonds. Therefore, all the Si-D bonds were lost, which is quite different from the alkali/D/Si(100) system. More Ba deposition did not induce the desorption of D atoms. The formed Ba-D bonds are considered to stay between the first and second layer.

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页码：82 / 87

页数：6

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