New desorption state of D-2 from deuterium-terminated Si(100) by potassium adsorption

被引：5

作者：

Hongo, S

Taniguchi, S

Fujimoto, N

Urano, T

Kanaji, T

机构：

[1] Dept. of Elec. and Electron. Eng., Faculty of Engineering, Kobe University, Rokko, Nada

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

alkali metals; compound formation; deuterium; semiconducting surfaces; silicon; surface chemical reaction; thermal desorption; thermal desorption spectroscopy; work function measurements;

D O I：

10.1016/0039-6028(96)00248-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Metastable deexcitation spectroscopy (MDS) and thermal desorption spectroscopy (TDS) were used to investigate how potassium adsorption affects deuterium binding to a Si(100) surface, Upon depositing potassium atoms on the deuteride silicon, some of the preadsorbed deuterium atoms bound to the Si-dangling bonds break the bonds to produce K+-D- bonds with its D- end toward the vacuum. The new D-2 desorption peak related to the K-D bonds was found at 140 degrees C, which was supported by MDS and work function experiments.

引用

收藏

页码：698 / 702

页数：5

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