Reflectance-difference spectroscopy study of the Fermi-level position of low-temperature-grown GaAs

被引：18

作者：

Chen, YH ^{[1
]}

Yang, Z ^{[1
]}

Li, RG ^{[1
]}

Wang, YQ ^{[1
]}

Wang, ZG ^{[1
]}

机构：

[1] CHINESE ACAD SCI, INST SEMICOND, LAB SEMICOND MAT SCI, BEIJING 100083, PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.55.R7379

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of a reflectance-difference spectroscopy study of GaAs grown on (100) GaAs substrates by low-temperature molecular-beam epitaxy (LT-GaAs) are presented. In-plane optical anisotropy resonances which come from the linear electro-optic effect produced by the surface electric field are observed. The RDS line shape of the resonances clearly shows that the depletion region of LT-GaAs is indeed extremely narrow (much less than 200 Angstrom). The surface potential is obtained from the RDS resonance amplitude without the knowledge of space-charge density. The change of the surface potential with post-growth annealing temperatures reflects a complicated movement of the Fermi level in LT-GaAs. The Fermi level still moves for samples annealed at above 600 degrees C, instead of being pinned to the As precipitates. This behavior can be explained by the dynamic properties of defects in the annealing process.

引用

页码：R7379 / R7382

页数：4

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