Synthesis, characterization and gas permeation properties of a silica membrane prepared by high-pressure chemical vapor deposition

被引:66
作者
Araki, Sadao
Mohri, Norito
Yoshimitsu, Yuichi
Miyake, Yoshikazu
机构
[1] Hitachi Zosen Corp, Business Promot & Prod Dev Ctr, Tech Res Inst, Taisho Ku, Osaka 5510022, Japan
[2] Kansai Univ, Dept Chem Engn, Suita, Osaka 5648680, Japan
[3] Kansai Univ, High Technol Res Ctr, Suita, Osaka 5648680, Japan
关键词
silica membrane; hydrogen separation; high-pressure CVD; tetramethylorthosilicate; high selectivity;
D O I
10.1016/j.memsci.2006.12.034
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Cylindrical silica membranes with dead-end structure were prepared by an extended counter-diffusion chemical vapor deposition (CVD) method, in which a tetramethylorthosilicate (TMOS) silica source was fed from the outside of a cylindrical membrane support with gamma-alumina interlayer (the membrane side), and oxygen gas was fed from the inside (the support side). Extended counter-diffusion CVD, is a method of depositing silica films under highly pressurized conditions applied to the membrane side where TMOS is supplied. Two silica membranes were deposited for 10 h at 573 K under differential pressures of 0.1 MPa and 0.0 MPa applied between the cylindrical membranes. The hydrogen permeances for these silica membranes were unaffected (5 x 10(-8) mol m(-2) s(-1) Pa-1 at 573 K), although the methane and carbon dioxide permeances were greatly reduced for dense silica films prepared by high-pressure CVD (HPCVD). Therefore, the selectivity of hydrogen over methane and carbon dioxide was 24,000, and 1200, respectively. It is suggested from energy dispersive X-ray microanalysis (EDX) observations in scanning electron microscopy (SEM) and scanning probe microscopy (SPM) results that this high selectivity was due to the reduced number of defects and/or pinholes formed in the dense silica membranes by HPCVD. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:138 / 145
页数:8
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