共 15 条
[1]
Bennett BR, 1996, APPL PHYS LETT, V68, P505, DOI 10.1063/1.116381
[2]
InAs-GaAs quantum pyramid lasers: In situ growth, radiative lifetimes and polarization properties
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1996, 35 (2B)
:1311-1319
[6]
Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122
[7]
Reflection high energy electron diffraction intensity oscillations during the growth of ZnSe on cleaved GaAs(110) surface by molecular beam epitaxy
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1996, 35 (3B)
:L366-L369
[8]
Krost A, 1996, APPL PHYS LETT, V68, P785, DOI 10.1063/1.116532
[9]
LEONARD D, 1993, APPL PHYS LETT, V63, P3202