Highly spin-polarized tunneling in fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co50Fe50 magnetic tunnel junctions with exchange biasing

被引：135

作者：

Marukame, Takao ^{[1
]}

Ishikawa, Takayuki ^{[1
]}

Hakamata, Shinya ^{[1
]}

Matsuda, Ken-ichi ^{[1
]}

Uemura, Tetsuya ^{[1
]}

Yamamoto, Masafumi ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Div Elect Informat, Kita Ku, Sapporo, Hokkaido 0600814, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期

基金：

日本学术振兴会;

关键词：

D O I：

10.1063/1.2428412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully epitaxial magnetic tunnel junctions (MTJs) with exchange biasing were fabricated with a full-Heusler alloy Co2Cr0.6Fe0.4Al (CCFA) thin film and a MgO tunnel barrier, where a Co50Fe50 upper electrode was used in a synthetic ferrimagnetic Co50Fe50/Ru/Co90Fe10 trilayer exchange-biased with an IrMn layer through the Co90Fe10/IrMn interface. The fabricated MTJs exhibited clear exchange-biased tunnel magnetoresistance (TMR) characteristics with high TMR ratios of 109% at room temperature and 317% at 4.2 K. A high tunneling spin polarization of 0.88 at 4.2 K was estimated for epitaxial CCFA films with the B2 structure. (c) 2007 American Institute of Physics.

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页数：3

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共 19 条

[1] Large negative magnetoresi stance effects in Co2Cr0.6Fe0.4Al [J].

Block, T ;

Felser, C ;

Jakob, G ;

Ensling, J ;

Mühling, B ;

Gütlich, P ;

Cava, RJ .

JOURNAL OF SOLID STATE CHEMISTRY, 2003, 176 (02) :646-651

[2] NEW CLASS OF MATERIALS - HALF-METALLIC FERROMAGNETS [J].

DEGROOT, RA ;

MUELLER, FM ;

VANENGEN, PG ;

BUSCHOW, KHJ .

PHYSICAL REVIEW LETTERS, 1983, 50 (25) :2024-2027

[3] Large tunneling magnetoresistance at room temperature using a Heusler alloy with the B2 structure [J].

Inomata, K ;

Okamura, S ;

Goto, R ;

Tezuka, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (4B) :L419-L422

[4] SEARCH FOR HALF-METALLIC COMPOUNDS IN CO(2)MNZ (Z=IIIB, IVB, VB ELEMENT) [J].

ISHIDA, S ;

FUJII, S ;

KASHIWAGI, S ;

ASANO, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1995, 64 (06) :2152-2157

[5] Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier [J].

Ishikawa, T. ;

Marukame, T. ;

Kijima, H. ;

Matsuda, K. -I. ;

Uemura, T. ;

Arita, M. ;

Yamamoto, M. .

APPLIED PHYSICS LETTERS, 2006, 89 (19)

[6] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[7] Tunnel magnetoresistance in epitaxial magnetic tunnel junctions using full-Heusler alloy Co2MnGe thin film and MgO tunnel barrier [J].

Marukame, T ;

Ishikawa, T ;

Matsuda, K ;

Uemura, T ;

Yamamoto, M .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (08)

[8] High tunnel magnetoresistance in epitaxial Co2Cr0.6Fe0.4Al/MgO/CoFe tunnel junctions [J].

Marukame, T ;

Kasahara, T ;

Matsuda, KI ;

Uemura, T ;

Yamamoto, A .

IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (10) :2603-2605

[9] Fabrication of fully epitaxial magnetic tunnel junctions using full-Heusler alloy Co2Cr0.6Fe0.4Al thin film and MgO tunnel barrier [J].

Marukame, T ;

Kasahara, T ;

Matsuda, K ;

Uemura, T ;

Yamamoto, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (16-19) :L521-L524

[10] High tunnel magnetoresistance in fully epitaxial magnetic tunnel junctions with a full-Heusler alloy Co2Cr0.6Fe0.4Al thin film [J].

Marukame, Takao ;

Ishikawa, Takayuki ;

Matsuda, Ken-Ichi ;

Uemura, Tetsuya ;

Yamamoto, Masafumi .

APPLIED PHYSICS LETTERS, 2006, 88 (26)