Spin-dependent tunneling characteristics of fully epitaxial magnetic tunneling junctions with a full-Heusler alloy Co2MnSi thin film and a MgO tunnel barrier

被引：165

作者：

Ishikawa, T. ^{[1
]}

Marukame, T. ^{[1
]}

Kijima, H. ^{[1
]}

Matsuda, K. -I. ^{[1
]}

Uemura, T. ^{[1
]}

Arita, M. ^{[1
]}

Yamamoto, M. ^{[1
]}

机构：

[1] Hokkaido Univ, Div Elect Informat, Kita Ku, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido 0600814, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

关键词：

D O I：

10.1063/1.2378397

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fully epitaxial, exchange-biased magnetic tunnel junctions (MTJs) were fabricated with a Co-based full-Heusler alloy Co2MnSi (CMS) thin film as a lower electrode, a MgO tunnel barrier, and a Co50Fe50 upper electrode. The microfabricated CMS/MgO/Co50Fe50 MTJs exhibited relatively high tunnel magnetoresistance ratios of 90% at room temperature and 192% at 4.2 K. The bias voltage dependence of differential conductance (dI/dV) for the parallel and antiparallel magnetization configurations suggested the existence of a basic energy gap structure for the minority-spin band of the CMS electrode with an energy difference of about 0.4 eV between the bottom of the vacant minority-spin conduction band and the Fermi level.

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页数：3

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