Electron tunneling experiments on skutterudite Co1-xFexSb3 semiconductors

被引：19

作者：

Nagao, J

Ferhat, M

Anno, H

Matsubara, K

Hatta, E

Mukasa, K

机构：

[1] Hokkaido Natl Ind Res Inst, AIST, MITI, Div Mat, Sapporo, Hokkaido 0628517, Japan

[2] Tokyo Univ Sci, Dept Elect & Comp Sci, Onoda 7560884, Japan

[3] Hokkaido Univ, Grad Sch Engn, Nanoelect Lab, Sapporo, Hokkaido 0608286, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126670

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron tunneling experiments were performed on p-Col(1-x)Fe(x)Sb(3)-Al-oxide-Al junctions for x = 0 and x = 0.1 at 4.2 K. A U-shaped tunneling conductance curve obtained for polycrystalline p-CoSb3 clearly shows an energy-band gap of similar to 50 meV. For p-Co0.9Fe0.1Sb3 skutterudites, a strong zero-bias conductance anomaly is observed. This anomaly may be due to a structural disorder arising from defects such as vacancies and interstitial Fe atoms. (C) 2000 American Institute of Physics. [S0003-6951(00)00223-0].

引用

页码：3436 / 3438

页数：3