Breakdown characteristics of ultra thin gate oxides following field and temperature stresses

被引：19

作者：

Briere, O ^{[1
]}

Halimaoui, A ^{[1
]}

Ghibaudo, G ^{[1
]}

机构：

[1] LPCS,F-38016 GRENOBLE,FRANCE

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 07期

关键词：

D O I：

10.1016/S0038-1101(97)00009-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Here, we investigate the reliability of silicon dioxide layers for two different thickness values (8 and 4.5 nm). The time to breakdown (t(bd)) was determined using constant voltage stress (CVS) under different experimental conditions. The first set of data, which was used to determine the activation energy, corresponds to t(bd) at fixed electric field and different temperatures. The second set of data was obtained at fixed temperature and increasing electric field and was used to determine the field acceleration factor. It is shown that both activation energy and field acceleration factor can be used to determine the lifetime and the reliability of the gate oxide. For the thinner oxide, we observed a different behavior. In fact, during the CVS of the 4.5 nm thick oxide a quasi-breakdown phenomenon was found. The light emission which occurred during this phenomenon was investigated. (C) 1997 Published by Elsevier Science Ltd.

引用

页码：981 / 985

页数：5

共 23 条

[1] ANOLICK ES, 1979, P INT REL PHYS S, P8
[2] Baglee D. A., 1984, P INT RELIABILITY PH, P152, DOI 10.1109/IRPS.1984.362035
[3] Barrett C. R., 1976, International Electron Devices Meeting. (Technical digest), P319
[4] BERMAN A, 1981, P INT RELIABILITY PH, P204
[5] CHEN CF, 1987, IEEE T ELECTRON DEV, V34, P1540, DOI 10.1109/T-ED.1987.23117
[6] CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957
[7] CHIANG CL, 1987, P IEEE IRPS, P72
[8] Crook DL., 1979, P 17 INT REL PHYS S, P1
[9] STRESS-INDUCED LEAKAGE CURRENTS IN THIN OXIDES
DIMARIA, DJ
[J]. MICROELECTRONIC ENGINEERING, 1995, 28 (1-4) : 63 - 66
[10] DOMANGUE A, 1984, P INT REL PHYS S, P140

← 1 2 3 →