Spectroscopic evidence for limited carrier hopping interaction in amorphous ZnO thin film

被引：40

作者：

Cho, Deok-Yong ^{[1
]}

Kim, Jeong Hwan ^{[5
]}

Na, Kwang Duk ^{[5
]}

Song, Jaewon ^{[5
]}

Hwang, Cheol Seong ^{[5
]}

Park, Byeong-Gyu ^{[4
]}

Kim, Jae-Young ^{[4
]}

Min, Chul-Hee ^{[2
,3
]}

Oh, Se-Jung ^{[2
,3
]}

机构：

[1] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, FPRD, Seoul 151747, South Korea

[3] Seoul Natl Univ, CSCMR, Seoul 151747, South Korea

[4] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, South Korea

[5] Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Mat Sci & Engn, Seoul 151744, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 26期

关键词：

amorphous semiconductors; electronic structure; Fermi level; grain boundaries; hopping conduction; II-VI semiconductors; impurities; photoelectron spectra; semiconductor thin films; valence bands; wide band gap semiconductors; X-ray absorption spectra; zinc compounds; EDGE;

D O I：

10.1063/1.3275738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic structure of amorphous ZnO film (a-ZnO) was examined by O K- and Zn L-3-edge x-ray absorption spectroscopy and valence band photoemission spectroscopy. Comparative studies of a-ZnO and a wurtzite ZnO (w-ZnO) revealed a decrease in Zn 4s-O 2p hybridization strength and the localization of Zn 4s band as a consequence of local structural disorder, indicating limited electron hopping interactions in a-ZnO. The 0.1 eV higher Fermi-level of a-ZnO compared to w-ZnO suggests that the electrical properties of a-ZnO are different from those in w-ZnO due to structural disorder, even in the absence of impurities or grain boundaries.

引用

页数：3

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