Semiconductor-Dielectric Blends: A Facile All Solution Route to Flexible All-Organic Transistors

被引：122

作者：

Lee, Wi Hyoung ^{[1
]}

Lim, Jung Ah ^{[1
]}

Kwak, Donghoon ^{[1
]}

Cho, Jeong Ho ^{[1
]}

Lee, Hwa Sung ^{[1
]}

Choi, Hyun Ho ^{[1
]}

Cho, Kilwon ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 42期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; PHASE-SEPARATION; PERFORMANCE; MORPHOLOGY; MOBILITY;

D O I：

10.1002/adma.200900277

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A one-step process for the production of all-organic, all-solution-processed field-effect transistors (FETs) can be achieved using triethylsilylethynyl anthradithiophene (TES-ADT). TES-ADT has a lower surface energy than poly(methyl methacrylate) (PMMA), which results in a segregation and crystal formation of TES-ADT at the air-film interface after spin-casting and subsequent solvent annealing. The resulting FETs comprise vertically phase-separated semiconducting and dielectric layers and exhibit high performances.

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页码：4243 / +

页数：7

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