Formation and ordering of Ge nanocrystals on SiO2 using FIB nanolithography

We first investigate the spontaneous formation of nanometric and highly dense (similar to 3 x 10(12) cm(-2)) Ge droplets on SiO2/ Si(00 1) by scanning tunnelling microscopy and spectroscopy. Ge dots are grown using a two-step process: first, Ge deposition on the clean SiO2 surface at room temperature (RT) and second, thermal annealing at 500 degrees C. Ge dots appear free of germanium oxides. Then we show the ordering of Ge nanocrystals (NCs) on SiO2/Si(00 1) substrates patterned by focused ion beam (FIB). Lateral ordering of the ultra-dense Ge nanodots was achieved by the combination of the following. technological steps: (a) use of a FIB to create ordered two-dimensional (2D) arrays of regular holes on a field oxide on the silicon substrate, (b) chemical cleaning and restoring of the Si surface in the holes, (c) further oxidation to transfer the pattern from the field oxide to the silicon substrate, (d) removal of the field oxide and thermal re-oxidation of the sample in order to create a tunnelling oxide of homogeneous thickness on the patterned silicon surface and (e) self-assembly of the 2D arrays of Ge dots on the patterned tunnelling oxide. We show that Ge NCs are ordered in the FIB holes whatever is their dimension/density. (C) 2006 Elsevier Ltd. All rights reserved.