Arrays of Ge islands on Si(001) grown by means of electron-beam pre-patterning

被引：50

作者：

Borgström, M ^{[1
]}

Zela, V ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

NANOTECHNOLOGY | 2003年 / 14卷 / 02期

关键词：

D O I：

10.1088/0957-4484/14/2/331

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We show that well-defined arrays of self-assembled Ge dots on Si(001) can be grown after pre-patterning the Si surface by means of an electron beam. The electron beam produces C-containing growth masks. The overgrowth of these masks with Si results in pits at the Si surface, in and around which Ge dots nucleate selectively. A manifold of different arrays can be obtained. Almost perfect arrays of quadruples of dots nucleate in the intersections of the four {11n} facets. This way of producing quantum dot arrays is very promising for producing dot structures suitable for use in the study of, for instance, dot-dot tunnelling and related effects.

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收藏

页码：264 / 267

页数：4

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