Electron beam prepatterning for site control of self-assembled quantum dots

被引：20

作者：

Borgstrom, M ^{[1
]}

Johansson, J ^{[1
]}

Samuelson, L ^{[1
]}

Seifert, W ^{[1
]}

机构：

[1] Univ Lund, S-22100 Lund, Sweden

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 10期

关键词：

D O I：

10.1063/1.1351528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A site-control technique for individual InAs quantum dots (QDs), formed by self-assembling has been developed, using scanning-electron-microscope assisted nanodeposition and metalorganic vapor phase epitaxy. We find that the nanoscale deposits, created at the focal point of the electron beam on a semiconductor surface, act as "nanogrowth masks". Growth of a thin epitaxial layer produces nanoholes extending down to the deposits. The carbon deposits can be removed by oxygen plasma etching. When a compressively strained layer is deposited on this surface, QDs are self-organized at the hole sites, while no dots are observed in the flat surface region. (C) 2001 American Institute of Physics.

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页码：1367 / 1369

页数：3

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