Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography

被引：129

作者：

Kohmoto, S ^{[1
]}

Nakamura, H ^{[1
]}

Ishikawa, T ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 3002635, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 22期

关键词：

D O I：

10.1063/1.125364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nanometer-scale site-control technique for individual InAs quantum dots (QDs) has been developed by using scanning tunneling microscope (STM) -assisted nanolithography and self-organizing molecular-beam epitaxy. We find that nanometer-scale deposits can be created on a GaAs surface by applying voltage and current pulses between the surface and a tungsten probe of the STM, and that they act as "nanomasks" on which GaAs does not grow directly. Accordingly, subsequent thin GaAs growth produces GaAs nanoholes above the deposits. By supplying 1.1 ML InAs on this surface, QDs are self-organized at the hole sites, while hardly any undesirable Stranski-Krastanov QDs are formed in the flat surface region. Using this technique with nanometer precision, a QD pair with 45 nm pitch is fabricated. (C) 1999 American Institute of Physics. [S0003-6951(99)03048-X].

引用

页码：3488 / 3490

页数：3

共 11 条

[1] Island size and environment dependence of adatom capture: Cu/Co islands on Ru(0001) [J].

Bartelt, MC ;

Schmid, AK ;

Evans, JW ;

Hwang, RQ .

PHYSICAL REVIEW LETTERS, 1998, 81 (09) :1901-1904

[2] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[3] Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy [J].

Ishikawa, T ;

Kohmoto, S ;

Asakawa, K .

APPLIED PHYSICS LETTERS, 1998, 73 (12) :1712-1714

[4] Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy [J].

Jeppesen, S ;

Miller, MS ;

Hessman, D ;

Kowalski, B ;

Maximov, I ;

Samuelson, L .

APPLIED PHYSICS LETTERS, 1996, 68 (16) :2228-2230

[5] Selective-area GaAs growth using nitrogen passivation and scanning-tunneling-microscopy modification on a nanometer scale [J].

Kasu, M ;

Makimoto, T ;

Kobayashi, N .

APPLIED PHYSICS LETTERS, 1997, 70 (09) :1161-1163

[6] InAs-Dot/GaAs structures site-controlled by in situ electron-beam lithography and self-organizing molecular beam epitaxy growth [J].

Kohmoto, S ;

Ishikawa, T ;

Asakawa, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (2B) :1075-1077

[7] Perfect spatial ordering of self-organized InGaAs/AlGaAs box-like structure array on GaAs (311)B substrate with silicon nitride dot array [J].

Kuramochi, E ;

Temmyo, J ;

Tamamura, T ;

Kamada, H .

APPLIED PHYSICS LETTERS, 1997, 71 (12) :1655-1657

[8] Spatial ordering of islands grown on patterned surfaces [J].

Lee, C ;

Barabasi, AL .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2651-2653

[9] DIRECT FORMATION OF QUANTUM-SIZED DOTS FROM UNIFORM COHERENT ISLANDS OF INGAAS ON GAAS-SURFACES [J].

LEONARD, D ;

KRISHNAMURTHY, M ;

REAVES, CM ;

DENBAARS, SP ;

PETROFF, PM .

APPLIED PHYSICS LETTERS, 1993, 63 (23) :3203-3205

[10]

NAKAMURA H, UNPUB

← 1 2 →