Site control of self-organized InAs dots on GaAs substrates by in situ electron-beam lithography and molecular-beam epitaxy

被引：91

作者：

Ishikawa, T ^{[1
]}

Kohmoto, S ^{[1
]}

Asakawa, K ^{[1
]}

机构：

[1] Femtosecond Technol Res Assoc, Tsukuba, Ibaraki 30026, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 12期

关键词：

D O I：

10.1063/1.122254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied a site-control method for self-organized InAs quantum dots on GaAs substrates by a combination of in situ electron-beam (FB) lithography and molecular-beam epitaxy (MBE) using an ultrahigh-vacuum multichamber system. Small and shallow holes were patterned on a MBE-grown GaAs (001) surface by in situ EB writing and Cl-2-gas etching. When more than a 1.4 monolayer of InAs was applied to the patterned surface, In(Ga)As dots were preferentially self-organized in the holes while dot formation around the holes was sufficiently suppressed. When we further increased the amount of InAs, the dots enlarged remarkably, presumably due to a stress-relaxation effect. (C) 1998 American Institute of Physics.

引用

页码：1712 / 1714

页数：3

共 18 条

[1] ARAKAWA Y, 1982, APPL PHYS LETT, V40, P929
[2] INDIUM ADATOM MIGRATION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF STRAINED INGAAS/GAAS SINGLE QUANTUM WELLS
ARENT, DJ
NILSSON, S
GALEUCHET, YD
MEIER, HP
WALTER, W
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (25) : 2611 - 2613
[3] RAPID RADIATIVE DECAY AND ENHANCED OPTICAL NONLINEARITY OF EXCITONS IN A QUANTUM WELL
HANAMURA, E
[J]. PHYSICAL REVIEW B, 1988, 38 (02): : 1228 - 1234
[4] DISTRIBUTIONS OF GROWTH-RATES ON PATTERNED SURFACES MEASURED BY SCANNING MICROPROBE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION
HATA, M
ISU, T
WATANABE, A
KATAYAMA, Y
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (04): : 692 - 696
[5] EFFECTS OF ELECTRON-BEAM IRRADIATION AND SUBSEQUENT CL2 EXPOSURE ON PHOTOOXIDIZED C(4 X 4) GAAS - MECHANISM OF IN-SITU EB LITHOGRAPHIC PATTERNING
IDE, Y
YAMADA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (10A): : L1378 - L1381
[6] In situ electron-beam processing for GaAs/AlGaAs nanostructure fabrications
Ishikawa, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (11): : 5583 - 5596
[7] Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
Jeppesen, S
Miller, MS
Hessman, D
Kowalski, B
Maximov, I
Samuelson, L
[J]. APPLIED PHYSICS LETTERS, 1996, 68 (16) : 2228 - 2230
[8] SUB-100 NM PATTERNING OF GAAS USING IN-SITU ELECTRON-BEAM LITHOGRAPHY
KAWANISHI, H
SUGIMOTO, Y
TANAKA, N
ISHIKAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (9A): : 4033 - 4037
[9] IN-SITU FABRICATION OF SELF-ALIGNED INGAAS QUANTUM DOTS ON GAAS MULTIATOMIC STEPS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
KITAMURA, M
NISHIOKA, M
OSHINOWO, J
ARAKAWA, Y
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (26) : 3663 - 3665
[10] CRITICAL LAYER THICKNESS FOR SELF-ASSEMBLED INAS ISLANDS ON GAAS
LEONARD, D
POND, K
PETROFF, PM
[J]. PHYSICAL REVIEW B, 1994, 50 (16): : 11687 - 11692

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