Exciton localization in cubic CdS/ZnSe type-II quantum-well structures

被引：5

作者：

Dinger, A ^{[1
]}

Baldauf, M ^{[1
]}

Petillon, S ^{[1
]}

Hepting, A ^{[1
]}

Lüerssen, D ^{[1
]}

Grün, M ^{[1
]}

Kalt, H ^{[1
]}

Klingshirn, C ^{[1
]}

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

关键词：

superlattice; CdS/ZnSe; exciton; localization; photoluminescence;

D O I：

10.1016/S0022-0248(00)00173-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigate the exciton localization in cubic CdS/ZnSe type-II superlattices using spatially integrated and spatially resolved photoluminescence spectroscopy. Spatially resolved photoluminescence images (intensity landscapes) show local reductions of the emission intensity. This can be attributed to potential profiles arising from fluctuations in layer thicknesses. Furthermore, narrow line emission (FWHM approximate to 300 mu eV) superimposed on a broad photoluminescence background (FWHM around 30 meV) is observed. Temperature-dependendent investigations reveal the contributions of the usual band-gap shift and phonon-assisted hopping processes to the non-monotonous shift of the spatially integrated luminescence maximum. When comparing the behaviour of the superlattices with the photoluminescence properties of single quantum wells we observe strong differences. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：660 / 664

页数：5

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