Electrical detection of spin transport in lateral ferromagnet-semiconductor devices

被引:712
作者
Lou, Xiaohua
Adelmann, Christoph
Crooker, Scott A.
Garlid, Eric S.
Zhang, Jianjie
Reddy, K. S. Madhukar
Flexner, Soren D.
Palmstrom, Chris J.
Crowell, Paul A. [1 ]
机构
[1] Univ Minnesota, Sch Phys & Astron, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[3] Natl High Magnet Field Lab, Los Alamos, NM 87545 USA
基金
美国国家科学基金会;
关键词
D O I
10.1038/nphys543
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The development of semiconductor spintronics requires a reliable electronic means for writing, processing and reading information using spin-polarized carriers. Here, we demonstrate a fully electrical scheme for achieving spin injection, transport and detection in a single device. Our device consists of a lateral semiconducting channel with two ferromagnetic contacts, one of which serves as a source of spin-polarized electrons and the other as a detector. Spin detection in the device is achieved through a non-local, spin-sensitive, Schottky-tunnel-barrier contact whose electrochemical potential depends on the relative magnetizations of the source and detector. We verify the effectiveness of this approach by showing that a transverse magnetic field suppresses the non-local signal at the detection contact by inducing spin precession and dephasing in the channel ( the Hanle effect). The sign of the signal varies with the injection current and is correlated with the spin polarization in the channel as determined by optical Kerr rotation measurements.
引用
收藏
页码:197 / 202
页数:6
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