A novel transparent pn+ junction based on indium tin oxides

被引：29

作者：

Ji, ZG ^{[1
]}

He, ZJ ^{[1
]}

Song, YL ^{[1
]}

Liu, K ^{[1
]}

Xiang, Y ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, CMSCE, Hangzhou 310027, Peoples R China

来源：

THIN SOLID FILMS | 2004年 / 460卷 / 1-2期

基金：

中国国家自然科学基金;

关键词：

SnO2; p-Type doping; pn junction;

D O I：

10.1016/j.tsf.2004.02.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

p-Type indium-doped SnO2 thin films were successfully fabricated on degenerate n(+) indium tin oxide glass and quartz glass by sol gel dip-coating method. It was found from the X-ray diffraction results that indium-doped SnO2 thin films were in the same rutile structure as that of undoped SnO2. Hall effect measurement results showed that for In/Sn ratio less than or equal to 0.33 and process temperature approximately 525 degreesC, the indium-doped tin oxide were p-type. The I-V curve measurement of a prototype transparent pn(+) junction consisting of a layer of p-type indium-doped SnO2 and a layer of degenerate n(+) tin-doped indium oxide showed typical rectifying characteristics. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：324 / 326

页数：3

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