Fabrication and characterization of p-type ZnO films by pyrolysis of zinc-acetate-ammonia solution

被引：35

作者：

Ji, ZG ^{[1
]}

Yang, CX ^{[1
]}

Liu, K ^{[1
]}

Ye, ZZ ^{[1
]}

机构：

[1] Zhejiang Univ, CMSCE, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 253卷 / 1-4期

关键词：

doping; zinc compounds; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(03)01003-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

P-type zinc oxide films were prepared on glass substrates by pyrolysis of ultrasonically nebulized zinc-acetate-ammonia solution. UV-visible absorption spectra, X-ray diffraction, and Hall effect measurements were carried out. Results show that zinc oxide films prepared by this method are preferentially oriented with the c-axis perpendicular to the substrate surface. The results of Hall effect measurements show that p-type conducting ZnO films with hole concentrations as high as 2.5 x 10(17)cm(-3) were obtained by this method. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：239 / 242

页数：4

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