Influence of dislocations on electron energy-loss spectra in gallium nitride

被引：50

作者：

Fall, CJ ^{[1
]}

Jones, R

Briddon, PR

Blumenau, AT

Frauenheim, T

Heggie, MI

机构：

[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England

[2] Newcastle Univ, Dept Phys, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[3] Univ Paderborn, D-33098 Paderborn, Germany

[4] Univ Sussex, CPES, Brighton BN1 9QJ, E Sussex, England

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 24期

关键词：

D O I：

10.1103/PhysRevB.65.245304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on first-principles calculations of electron energy-loss (EEL) spectra for bulk group-III nitrides and of spatially resolved EEL spectra for a variety of edge and screw dislocations in GaN. The theoretical bulk low-loss EEL spectra, in the 0-10 eV range, are in good agreement with recent experimental data. We find gap states associated with undecorated full-core dislocations that lead to absorption below the bulk onset energy in low-loss EEL spectroscopy. It is also found that the electrostatic potential at N atoms in the vicinity of an edge dislocation varies by an order of a volt and casts doubt on any simple interpretation of core-loss spectroscopy.

引用

页码：2453041 / 2453048

页数：8

共 37 条

[31] X-RAY-OBSERVATION OF THE STRUCTURAL PHASE-TRANSITION OF ALUMINUM NITRIDE UNDER HIGH-PRESSURE [J].

UENO, M ;

ONODERA, A ;

SHIMOMURA, O ;

TAKEMURA, K .

PHYSICAL REVIEW B, 1992, 45 (17) :10123-10126

[32] STABILITY OF THE WURTZITE-TYPE STRUCTURE UNDER HIGH-PRESSURE - GAN AND INN [J].

UENO, M ;

YOSHIDA, M ;

ONODERA, A ;

SHIMOMURA, O ;

TAKEMURA, K .

PHYSICAL REVIEW B, 1994, 49 (01) :14-21

[33]

Vennegues P, 1997, APPL PHYS LETT, V70, P2434, DOI 10.1063/1.118894

[34] EXPLICIT TREATMENT OF THE GALLIUM 3D ELECTRON IN GAN USING THE PLANE-WAVE PSEUDOPOTENTIAL METHOD [J].

WRIGHT, AF ;

NELSON, JS .

PHYSICAL REVIEW B, 1994, 50 (04) :2159-2165

[35] The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN [J].

Wright, AF ;

Grossner, U .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2751-2753

[36] Direct observation of the core structures of threading dislocations in GaN [J].

Xin, Y ;

Pennycook, SJ ;

Browning, ND ;

Nellist, PD ;

Sivananthan, S ;

Omnes, F ;

Beaumont, B ;

Faurie, JP ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2680-2682

[37] ELECTRONIC, OPTICAL, AND STRUCTURAL-PROPERTIES OF SOME WURTZITE CRYSTALS [J].

XU, YN ;

CHING, WY .

PHYSICAL REVIEW B, 1993, 48 (07) :4335-4351

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