Room-temperature polariton lasing in semiconductor microcavities

被引：866

作者：

Christopoulos, S. ^{[1
]}

von Hogersthal, G. Baldassarri Hoger

Grundy, A. J. D.

Lagoudakis, P. G.

Kavokin, A. V.

Baumberg, J. J.

Christmann, G.

Butte, R.

Feltin, E.

Carlin, J. -F.

Grandjean, N.

机构：

[1] Univ Southampton, Sch Phys & Astron, Southampton SO17 1BJ, Hants, England

[2] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.98.126405

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe a room-temperature low-threshold transition to a coherent polariton state in bulk GaN microcavities in the strong-coupling regime. Nonresonant pulsed optical pumping produces rapid thermalization and yields a clear emission threshold of 1 mW, corresponding to an absorbed energy density of 29 mu J cm(-2), 1 order of magnitude smaller than the best optically pumped (In,Ga)N quantum-well surface-emitting lasers (VCSELs). Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/- 5 degrees and spatial size around 5 mu m.

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页数：4

相关论文

共 29 条

[1]

[Anonymous], SEMICOND SCI TECHNOL

[2] Observation of Rabi splitting in a bulk GaN microcavity grown on silicon [J].

Antoine-Vincent, N ;

Natali, F ;

Byrne, D ;

Vasson, A ;

Disseix, P ;

Leymarie, J ;

Leroux, M ;

Semond, F ;

Massies, J .

PHYSICAL REVIEW B, 2003, 68 (15)

[3] Parametric oscillation in a vertical microcavity: A polariton condensate or micro-optical parametric oscillation [J].

Baumberg, JJ ;

Savvidis, PG ;

Stevenson, RM ;

Tartakovskii, AI ;

Skolnick, MS ;

Whittaker, DM ;

Roberts, JS .

PHYSICAL REVIEW B, 2000, 62 (24) :16247-16250

[4] High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition [J].

Binet, F ;

Duboz, JY ;

Off, J ;

Scholz, F .

PHYSICAL REVIEW B, 1999, 60 (07) :4715-4722

[5] SPONTANEOUS-EMISSION COUPLING FACTOR AND MODE CHARACTERISTICS OF PLANAR DIELECTRIC MICROCAVITY LASERS [J].

BJORK, G ;

HEITMANN, H ;

YAMAMOTO, Y .

PHYSICAL REVIEW A, 1993, 47 (05) :4451-4463

[6] Room-temperature polariton luminescence from a bulk GaN microcavity -: art. no. 033315 [J].

Butté, R ;

Christmann, G ;

Feltin, E ;

Carlin, JF ;

Mosca, M ;

Ilegems, M ;

Grandjean, N .

PHYSICAL REVIEW B, 2006, 73 (03)

[7] Impact of disorder on high quality factor III-V nitride microcavities [J].

Christmann, G. ;

Simeonov, D. ;

Butte, R. ;

Feltin, E. ;

Carlin, J. -F. ;

Grandjean, N. .

APPLIED PHYSICS LETTERS, 2006, 89 (26)

[8] Polariton lasing vs. photon lasing in a semiconductor microcavity [J].

Deng, H ;

Weihs, G ;

Snoke, D ;

Bloch, J ;

Yamamoto, Y .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2003, 100 (26) :15318-15323

[9] THEORY OF LASER ACTION IN DENSE EXCITON SYSTEMS [J].

HAUG, H ;

KOCH, S .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 82 (02) :531-543

[10] Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers [J].

Imamoglu, A ;

Ram, RJ ;

Pau, S ;

Yamamoto, Y .

PHYSICAL REVIEW A, 1996, 53 (06) :4250-4253