Excitonic trion X- in semiconductor quantum wells

被引：67

作者：

Stebe, B

Munschy, G

Stauffer, L

Dujardin, F

Murat, J

机构：

[1] UNIV STRASBOURG 1,ICPMS,GONO,F-67030 STRASBOURG,FRANCE

[2] UNIV HAUTE ALSACE,LAB PHYS & SPECTROSCOPIE ELECT,F-68093 MULHOUSE,FRANCE

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.56.12454

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The ground-state energy of the negatively charged exciton in a semiconductor quantum well is calculated assuming finite band offsets in a two-band model within the envelope-function approximation with isotropic electron and hole masses. A variational 66-term Hylleraas-type wave function has been used. The stability against dissociation into an exciton and a free electron is investigated in the cases of GaAs/Ga1-xAlxAs and CdTe/Cd1-xZnxTe quantum wells with several compositions and different values of the well width. A stable binding is obtained in all cases. The calculated transition energies are in reasonable agreement with the available experimental values. A particular experiment is proposed in order to identify charged excitons and to distinguish them from neutral donor bound excitons.

引用

页码：12454 / 12461

页数：8

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