Patterned n+ implant into InP substrate for HBT subcollector

被引：5

作者：

Chen, MY ^{[1
]}

Sokolich, M ^{[1
]}

Chow, DH ^{[1
]}

Bui, S ^{[1
]}

Royter, Y ^{[1
]}

Hitko, D ^{[1
]}

Thomas, S ^{[1
]}

Fields, CH ^{[1
]}

Rajavel, RD ^{[1
]}

Shi, BQ ^{[1
]}

机构：

[1] HRL Labs LLC, Malibu, CA 90265 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 10期

关键词：

heterojunction bipolar transistors (HBTs); InP; ion implantation; molecular beam epitaxy (MBE); semiconductor epitaxial layers;

D O I：

10.1109/TED.2004.835024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below the epitaxial layers. Device layers grown on implanted/annealed substrates were of similar quality to those on virgin InP. Maximum f(t) and f(max) of 240 and 310 GHz were obtained. We present the process How, details of the ion implantation, layer characterization, and device results.

引用

页码：1736 / 1739

页数：4

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