Stacking fault reduction in silicon-on-insulator (SOI) islands produced by selective epitaxial growth (SEG) of silicon using a thermally nitrided SiO2 field insulator

A method to fabricate silicon-on-insulator (SOI) device sized islands, using Epitaxial Lateral Overgrowth (ELO) from the Selective Epitaxial Growth (SEG) of Silicon, has approximate to 96.3% stacking fault-free SOI islands when SiO2 was used as the field insulator. When a nitrided thermal SiO2 was used approximate to 99% of the small islands were defect-free. Islands with rounded corners and nitrided oxide had stacking fault defects of less than 500/cm(2).