Molecular modification of 2,6-diphenylbenzo[1,2-b:4,5-b′]dichalcogenophenes by introduction of strong electron-withdrawing groups:: Conversion from p- to n-channel OFET materials

被引：38

作者：

Takimiya, Kazuo ^{[1
]}

Kunugi, Yoshihito

Ebata, Hideaki

Otsubo, Tetsuo

机构：

[1] Hiroshima Univ, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 7398527, Japan

[2] Hiroshima Univ, Inst Adv Mat Res, Higashihiroshima 7398530, Japan

[3] Tokai Univ, Fac Engn, Dept Appl Chem, Hiratsuka, Kanagawa 2591292, Japan

来源：

CHEMISTRY LETTERS | 2006年 / 35卷 / 10期

关键词：

D O I：

10.1246/cl.2006.1200

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

2,6-Diphenylbenzof 1,2-b:4,5-b']dithiophene (DPh-BDT) and -diselenophene (DPh-BDS) as p-channel semiconducting materials were modified by introducing fluoro, cyano, or trifluoromethyl groups into the attached phenyl moieties. On examination of organic field-effect transistors fabricated using these modified compounds, the trifluoromethyl-substituted DPh-BDT and BDS derivatives were found to act as n-channel semiconductors with high electron mobilities of 0.044 and 0.10 cm(2) V-1 s(-1), respectively.

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页码：1200 / 1201

页数：2

相关论文

共 26 条

[1] n-Type organic field-effect transistors with very high electron mobility based on thiazole oligomers with trifluoromethylphenyl groups [J].

Ando, S ;

Murakami, R ;

Nishida, J ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (43) :14996-14997

[2] High performance n-type organic field-effect transistors based on π-electronic systems with trifluoromethylphenyl groups [J].

Ando, S ;

Nishida, JI ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (15) :5336-5337

[3] Novel p- and n-type organic semiconductors with an anthracene unit [J].

Ando, S ;

Nishida, J ;

Fujiwara, E ;

Tada, H ;

Inoue, Y ;

Tokito, S ;

Yamashita, Y .

CHEMISTRY OF MATERIALS, 2005, 17 (06) :1261-+

[4] CHAIN-LENGTH DEPENDENCE OF ELECTRONIC AND ELECTROCHEMICAL PROPERTIES OF CONJUGATED SYSTEMS - POLYACETYLENE, POLYPHENYLENE, POLYTHIOPHENE, AND POLYPYRROLE [J].

BREDAS, JL ;

SILBEY, R ;

BOUDREAUX, DS ;

CHANCE, RR .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1983, 105 (22) :6555-6559

[5] High electron mobility and ambipolar transport in organic thin-film transistors based on a π-stacking quinoidal terthiophene [J].

Chesterfield, RJ ;

Newman, CR ;

Pappenfus, TM ;

Ewbank, PC ;

Haukaas, MH ;

Mann, KR ;

Miller, LL ;

Frisbie, CD .

ADVANCED MATERIALS, 2003, 15 (15) :1278-+

[6]

Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO

[7]

2-9

[8] Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors [J].

Facchetti, A ;

Yoon, MH ;

Stern, CL ;

Katz, HE ;

Marks, TJ .

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (33) :3900-3903

[9] Building blocks for n-type molecular and polymeric electronics.: Perfluoroalkyl-versus alkyl-functionalized oligothiophenes (nT; n=2-6).: Systematics of thin film microstructure, semiconductor performance, and modeling of majority charge injection in field-effect transistors [J].

Facchetti, A ;

Mushrush, M ;

Yoon, MH ;

Hutchison, GR ;

Ratner, MA ;

Marks, TJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (42) :13859-13874

[10] C-60 THIN-FILM TRANSISTORS [J].

HADDON, RC ;

PEREL, AS ;

MORRIS, RC ;

PALSTRA, TTM ;

HEBARD, AF ;

FLEMING, RM .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :121-123