Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

被引：23

作者：

Koo, Jae Bon

Lim, Jung Wook

Kim, Seong Hyun

Yun, Sun Jin

Ku, Chan Hoe

Lim, Sang Chul

Lee, Jung Hun

机构：

[1] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305700, South Korea

[2] Kyung Hee Univ, Informat Display Dept, Seoul 130701, South Korea

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 05期

关键词：

pentacene; organic transistor; inverter; threshold voltage; Al2O3; HMDS;

D O I：

10.1016/j.tsf.2006.08.037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The performances of pentacene thin-film transistor with plasma-enhanced atomic-layer-deposited (PEALD) 150 nm thick Al2O3 dielectric are reported. Saturation mobility of 0.38 cm(2)/V s, threshold voltage of I V, subthreshold swing of 0.6 V/decade, and on/off current ratio of about 10(8) have been obtained. Both depletion and enhancement mode inverter have been realized with the change of treatment method of hexamethyldisilazane on PEALD Al2O3 gate dielectric. Full swing depletion mode inverter has been demonstrated at input voltages ranging from 5 V to - 5 V at supply voltage of - 5 V. (c) 2006 Elsevier B.V. All rights reserved.

引用

收藏

页码：3132 / 3137

页数：6

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