Phosphonic acid self-assembled monolayer and amorphous hafnium oxide hybrid dielectric for high performance polymer thin film transistors on plastic substrates

被引：30

作者：

Acton, Orb ^{[1
]}

Osaka, Itaru ^{[2
]}

Ting, Guy ^{[3
]}

Hutchins, Daniel ^{[1
]}

Ma, Hong ^{[1
]}

McCullough, Richard D. ^{[2
]}

Jen, Alex K. -Y. ^{[1
,3
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Carnegie Mellon Univ, Dept Chem, Pittsburgh, PA 15213 USA

[3] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期

关键词：

VOLTAGE ORGANIC TRANSISTORS; FIELD-EFFECT TRANSISTORS;

D O I：

10.1063/1.3231445

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A vacuum-free solution processed hybrid dielectric composed of an n-octadecyl-phosphonic acid self-assembled monolayer on amorphous sol-gel processed hafnium oxide (HfO(x)) is demonstrated for low-voltage polymer semiconductor-based thin film transistors (TFTs). The phosphonic acid/HfO(x) hybrid dielectric provides high capacitance (0.41 mu F/cm(2)), low leakage current (5 x 10(-8) A/cm(2)), and is compatible with plastic substrates. The utility of this dielectric is demonstrated by fabricating high performance polymer TFTs based on a spin coated thiophene-thiazolothiazole copolymer with operating voltages under -2 V, negligible hysteresis, subthreshold slopes as low as 100 mV/dec, and hole mobilities up to 0.11 cm(2) V s. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3231445]

引用

页数：3

共 20 条

[11] Highly oriented crystals at the buried interface in polythiophene thin-film transistors [J].

Kline, RJ ;

Mcgehee, MD ;

Toney, MF .

NATURE MATERIALS, 2006, 5 (03) :222-228

[12] Rapid vapor-phase fabrication of organic-inorganic hybrid superlattices with monolayer precision [J].

Lee, Byoung H. ;

Ryu, Min Ki ;

Choi, Sung-Yool ;

Lee, Kwang-H. ;

Im, Seongil ;

Sung, Myung M. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (51) :16034-16041

[13] Low-voltage organic thin-film transistors with π-σ-phosphonic acid molecular dielectric monolayers [J].

Ma, Hong ;

Acton, Orb ;

Ting, Guy ;

Ka, Jae Won ;

Yip, Hin-Lap ;

Tucker, Neil ;

Schofield, Richard ;

Jen, Alex K. -Y. .

APPLIED PHYSICS LETTERS, 2008, 92 (11)

[14] Thermal stability of organic monolayers chemically grafted to minerals [J].

McElwee, J ;

Helmy, R ;

Fadeev, AY .

JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2005, 285 (02) :551-556

[15] Organic semiconducting oligomers for use in thin film transistors [J].

Murphy, Amanda R. ;

Frechet, Jean M. J. .

CHEMICAL REVIEWS, 2007, 107 (04) :1066-1096

[16] High-Lamellar Ordering and Amorphous-Like π-Network in Short-Chain Thiazolothiazole-Thiophene Copolymers Lead to High Mobilities [J].

Osaka, Itaru ;

Zhang, Rui ;

Sauve, Genevieve ;

Smilgies, Detlef-M. ;

Kowalewski, Tomasz ;

McCullough, Richard D. .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2009, 131 (07) :2521-2529

[17] High dielectric constant gate oxides for metal oxide Si transistors [J].

Robertson, J .

REPORTS ON PROGRESS IN PHYSICS, 2006, 69 (02) :327-396

[18] Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics [J].

Woebkenberg, Paul H. ;

Ball, James ;

Kooistra, Floris B. ;

Hummelen, Jan C. ;

de Leeuw, Dago M. ;

Bradley, Donal D. C. ;

Anthopoulos, Thomas D. .

APPLIED PHYSICS LETTERS, 2008, 93 (01)

[19] σ-π molecular dielectric multilayers for low-voltage organic thin-film transistors [J].

Yoon, MH ;

Facchetti, A ;

Marks, TJ .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2005, 102 (13) :4678-4682

[20] Electron and ambipolar transport in organic field-effect transistors [J].

Zaumseil, Jana ;

Sirringhaus, Henning .

CHEMICAL REVIEWS, 2007, 107 (04) :1296-1323

← 1 2 →