Nonvolatile resistive switching in spinel ZnMn2O4 and ilmenite ZnMnO3

被引：69

作者：

Peng, Haiyang ^{[1
]}

Wu, Tom ^{[1
]}

机构：

[1] Nanyang Technol Univ, Div Phys & Appl Phys, Sch Phys & Math Sci, Singapore 637371, Singapore

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 15期

基金：

新加坡国家研究基金会;

关键词：

MN-DOPED ZNO; ROOM-TEMPERATURE; FERROMAGNETISM; RESISTANCE; MEMORY; FILMS; INTERFACE;

D O I：

10.1063/1.3249630

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report that spinel ZnMn2O4 and ilmenite ZnMnO3 show excellent unipolar resistive switching behaviors, with ON/OFF ratios larger than 10(4). For both oxides, retention of more than 10 h and good endurance are achieved. Conduction of the OFF state is dominated by the space-charge-limited conduction mechanism, while the Ohmic behavior dictates the ON state, which suggests a filamentary conduction mechanism. Our study introduces two promising materials candidates for nonvolatile resistive random access memory devices, and furthermore it suggests that formation and rupture of conducting filaments are universal in certain ternary oxides even though they may possess distinct crystalline structures.(C) 2009 American Institute of Physics. [doi: 10.1063/1.3249630]

引用

页数：3

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