Recent progress of semiconductor photonic crystals

被引：1

作者：

Chutinan, A ^{[1
]}

Noda, S ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS | 2002年 / 4905卷

关键词：

photonic crystals; photonic bandgap; defects; optical integrated circuits; spontaneous emission; laser; semiconductor;

D O I：

10.1117/12.480987

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent progresses of semiconductor photonic crystals including both dime-dimensional (3D) and two-dimensional (2D) crystals are reviewed. On the 3D photonic crystals, we first review our approaches to fabricate full 3D photonic bandgap crystals at near-infrared wavelength region. Recent experimental results on an introduction of light emitters and defects into the 3D photonic crystals are then presented. On the 2D photonic crystals, we report two types of devices. One of this is a 2D photonic crystal laser, where the multi-directional distributed feedback effects and the control of polarization are described. The other is a channel add/drop filtering device. The theoretical and recent experimental results focusing on the polarization characteristics of the devices are explained.

引用

页码：67 / 77

页数：11

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