Rate theory of multicomponent adsorption of organic species on silicon wafer surface

被引：31

作者：

Habuka, H ^{[1
]}

Shimada, M

Okuyama, K

机构：

[1] Shin Etsu Handotai Co Ltd, Isobe Res & Dev Ctr, Gunma 3790196, Japan

[2] Hiroshima Univ, Fac Engn, Dept Chem Engn, Higashihiroshima, Hiroshima 7398527, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2000年 / 147卷 / 06期

关键词：

D O I：

10.1149/1.1393527

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

For the first time, the time-dependent change in the concentrations of organic species adsorbed on a silicon wafer surface is modeled using numerical calculations based on rate theory. An equation composed of the adsorption rate from the gas phase to the sill con wafer surface and the desorption rate from the silicon wafer surface is developed accounting for competitive processes in a multicomponent system. This equation can describe and predict the actual increase and decrease in the surface concentrations of propionic acid ester, siloxane (D9), and di(2-ethylhexyl)phthalate. It is also indicated that the organic species having a large adsorption rate with a small desorption rate remains in significant abundance on the silicon wafer surface for a very long period after cleaning. (C) 2000 The Electrochemical Society. S0013-4651(99)08-044-1. All rights reserved.

引用

页码：2319 / 2323

页数：5

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