Kinetics of electric-field-enhanced crystallization of amorphous silicon in contact with Ni catalyst

被引：9

作者：

Kim, HY ^{[1
]}

Kim, B ^{[1
]}

Bae, JU ^{[1
]}

Hwang, KJ ^{[1
]}

Seo, HS ^{[1
]}

Kim, CD ^{[1
]}

机构：

[1] LG Philips LCD R&D Ctr, Anyang 430080, Kyungki, South Korea

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 27期

关键词：

D O I：

10.1063/1.1532533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electric-field-enhanced crystallization of hydrogenated amorphous silicon in contact with nickel catalyst (Ni/a-Si:H) has been investigated. In order to elucidate the crystallization kinetics quantitatively, in situ conductivity measurement was used. With the change of Ni dose (4 x 10(13) similar to1.3 x 10(15) cm(-2)) and annealing temperature (550 similar to 500degreesC), crystallization rate varied drastically at the electric field of 33 V cm(-1). The activation energy for the crystallization was found to be strongly dependent on the Ni dose, 85 kJ mol(-1) for 1.3 x 10(15) Ni cm(-2), 243 kJ mol(-1) for 6 x 10(14) Ni cm(-2), and 276 kJ mol(-1) for 4 x 10(13) Ni cm(-2), respectively. The polycrystalline silicon films were composed of needle-like crystallites of similar to5 mum (long axis) and their thin-film transistors (TFTs) showed field effect mobility of 43 cm(2) V-1 s(-1). (C) 2002 American Institute of Physics. [DOI: 10.1063/1.1532533].

引用

页码：5180 / 5182

页数：3