Gas source MBE growth of GaN rich side of GaN1-xPx using ion-removed ECR radical cell

被引：40

作者：

Iwata, K ^{[1
]}

Asahi, H ^{[1
]}

Asami, K ^{[1
]}

Gonda, S ^{[1
]}

机构：

[1] OSAKA UNIV, INST SCI & IND RES, IBARAKI, OSAKA 567, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

基金：

日本学术振兴会;

关键词：

GaN; GaNP; gas source MBE; ECR radical cell; band gap narrowing; phase separation; EPITAXY; ALLOY;

D O I：

10.1016/S0022-0248(96)00926-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN-rich side of GaN1-xPx alloy are grown on (0 0 0 1) sapphire substrates by electron cyclotron resonance molecular beam epitaxy (ECR-MBE) using an ion removed ECR radical cell after the growth of high-quality GaN layers. GaN1-xPx exhibits potentially large variation of band-gap energy with P composition due to its large bowing. Maximum P composition of x = 0.015 is obtained. However, at the growth condition of high PH3 flow rate, phase separation into GaN-rich GaN1-xPx and GaP-rich GaP1-yNy is observed. Near band edge excitonic photoluminescence (PL) peak from GaN-rich side of GaN1-xPx layers shows large red shift with P composition. It suggests that the direct band edge of GaNP alloy shows large bowing.

引用

页码：150 / 155

页数：6

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