Structure of GaN films grown by hydride vapor phase epitaxy

被引：85

作者：

Romano, LT ^{[1
]}

Krusor, BS ^{[1
]}

Molnar, RJ ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 16期

关键词：

D O I：

10.1063/1.120051

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The structure of GaN films grown by hydride vapor phase epitaxy on sapphire substrates has been studied by x-ray diffraction, transmission electron microscopy (TEM), and atomic force microscopy. Films, 15-80 mu m thick, were grown on c-plane sapphire that were either pretreated with GaCl or contained a ZnO sputter deposited layer. The defect density, for both types of films, was found by plan view TEM to range between mid-10(7) to mid-10(8) dislocations/cm(2) despite very different structural defects at the film/substrate interface. Nanovoids were found; however, no cracks were observed in the films that were investigated by TEM. (C) 1997 American Institute of Physics.

引用

页码：2283 / 2285

页数：3

共 18 条

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