High-Mobility Nonvolatile Memory Thin-Film Transistors with a Ferroelectric Polymer Interfacing ZnO and Pentacene Channels

被引：131

作者：

Lee, Kwang H. ^{[1
]}

Lee, Gyubaek ^{[1
]}

Lee, Kimoon ^{[1
]}

Oh, Min Suk ^{[1
]}

Im, Seongil ^{[1
]}

Yoon, Sung-Min ^{[2
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Elect & Telecommun Res Inst, IT Convergence & Component Lab, Taejon 305700, South Korea

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 42期

关键词：

PHASE-TRANSITION;

D O I：

10.1002/adma.200900398

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Nonvolatile memory ferroelectric thin-film transistors (FeTFTs) with P(VDF-TrFE) polymer are demonstrated with both n-channel ZnO and p-channel pentacene. A high mobility of approximate to 1 cm(2) V-1 s(-1) and large memory window of approximate to 20V are achieved through the organic ferroelectric-inorganic channel hybrid device of ZnO-FeTFT. WRITE/ERASE states are clearly distinguished by +/- 20V switching for ZnO- and pentacene-FeTFTs.

引用

页码：4287 / +

页数：6

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