c-axis oriented (Na,K)NbO3 thin films on Si substrates using metalorganic chemical vapor deposition

Ferroelectric (Na,K)NbO3 (NKN) thin films were synthesized using metalorganic chemical vapor deposition (MOCVD) technique for the first time. The films are deposited on Si substrates with amorphous insulating layers in a horizontal hot-wall reactor using tetramethylheptanedionate (THD) precursors. 100% [001] oriented texturing with narrow mosaic broadening was achieved in the films both on SiO2/Si and SiNx/Si substrates. Electron Spectroscopy for Chemical Analysis (ESCA) analysis indicated that Na, K, Nb, and O are the primary elements present in the film. Dielectric spectroscopy for NKN films on SiO2/Si substrates showed dielectric permittivity epsilon' about 140 and loss tandelta less than 2% in the frequency range from 1 to 100 kHz. Current-voltage (I-V) measurements for this film showed low current density of similar to10(-8) A/cm(2) at the field of 200 kV/cm. (C) 2002 Elsevier Science B.V. All rights reserved.