Chemical bath deposition of cubic copper (I) selenide and its room temperature transformation to the orthorhombic phase

被引:73
作者
LevyClement, C [1 ]
NeumannSpallart, M [1 ]
Haram, SK [1 ]
Santhanam, KSV [1 ]
机构
[1] TATA INST FUNDAMENTAL RES,CHEM PHYS GRP,BOMBAY 400005,MAHARASHTRA,INDIA
关键词
copper; electrochemistry; phase transitions; selenides;
D O I
10.1016/S0040-6090(97)00021-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The chemical bath deposition of cubic copper (I) selenide (Cu2-xSe) thin films has been achieved on an inert Pt substrate from a selenosulfite-containing bath at 75 degrees C. The electrochemical polarisation of this film at -0.78 V vs. SCE leads to the transformation of the compound into the orthorhombic phase. The lattice parameter of the face-centered cubic copper (I) selenide increases from 5.742 Angstrom to 5.761 Angstrom due to the decrease of the concentration of Cu vacancies upon electrochemical polarisation. The transformation of the cubic to an orthorhombic phase starts to occur when copper vacancies reach a critical value of x < 0.15. This transformation seems to be induced by a Cu3Se2 impurity in the cubic Cu2-xSe phase. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:12 / 16
页数:5
相关论文
共 20 条
[1]  
[Anonymous], 1985, STANDARD POTENTIALS
[2]  
BICKULOVA NN, 1995, 10 INT C SOL STAT IO
[3]  
BORCHERT W, 1945, Z KRISTALLOGRAPHIE, V0106
[4]  
CHOPRA KL, 1982, PHYS THIN FILMS, V12, P201
[5]   ELECTROLESS DEPOSITION OF ORTHORHOMBIC COPPER (I) SELENIDE AND ITS ROOM-TEMPERATURE PHASE-TRANSFORMATION TO CUBIC STRUCTURE [J].
HARAM, SK ;
SANTHANAM, KSV .
THIN SOLID FILMS, 1994, 238 (01) :21-26
[6]   ELECTROLESS DEPOSITION ON COPPER SUBSTRATES AND CHARACTERIZATION OF THIN-FILMS OF COPPER(I) SELENIDE [J].
HARAM, SK ;
SANTHANAM, KSV ;
NEUMANNSPALLART, M ;
LEVYCLEMENT, C .
MATERIALS RESEARCH BULLETIN, 1992, 27 (10) :1185-1191
[7]   CRYSTAL-STRUCTURES OF CU1.8SE, CU3SE2, ALPHA-CUSE AND GAMMA-CUSE, CUSE2, AND CUSE2II [J].
HEYDING, RD ;
MURRAY, RM .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1976, 54 (06) :841-848
[8]  
*JCPDS, 19402 JCPDS
[9]  
*JCPDS, 371187 JCPDS
[10]  
*JCPDS, 1993, 6680 JCPDS